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preliminary data this is preliminary information on a new product now in deve lopment or undergoing evaluation. details are subject to change without notice. september 2008 rev 2 1/13 13 STK28N3LLH5 n-channel 30 v, 0.0035 ? , 28 a, polarpak ? stripfet?v power mosfet features ultra low top and bottom junction to case thermal resistance r ds(on) * q g industry benchmark extremely low on-resistance r ds(on) very low switching gate charge fully encapsulated die 100% matte tin finish (in compliance with the 2002/95/ec european directive) high avalanche ruggedness polarpak ? is a trademark of vishay application switching applications description this product utilizes the 5th generation of design rules of st?s proprietary stripfet? technology. the lowest available r ds(on) *q g , in this chip scale package, makes this device suitable for the most demanding dc-dc converter applications, where high power density is to be achieved. figure 1. internal schematic diagram type v dss r ds(on) max r ds(on) *q g STK28N3LLH5 30 v < 0.0045 ? 68.4 nc*m ? polarpak ? bottom view top view table 1. device summary order code marking package packaging STK28N3LLH5 283l5 polarpak ? tape and reel www.st.com
contents STK28N3LLH5 2/13 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
STK28N3LLH5 electrical ratings 3/13 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v ds drain-source voltage (v gs = 0) 30 v v gs gate-source voltage 22 v i d (1) 1. when mounted on fr-4 board of 1inch 2 , 2 oz cu and 10sec drain current (continuous) at t c = 25c 28 a i d drain current (continuous) at t c = 100c 17.5 a i dm (2) 2. pulse width limited by package drain current (pulsed) 112 a p tot (1) total dissipation at t c = 25c 5.2 w derating factor 0.0416 w/c e as (3) 3. starting t j = 25c, i d = 10a, v dd = 25v single pulse avalanche energy 1 j t j t stg operating junction temperature storage temperature -55 to 150 c table 3. thermal data symbol parameter typ. max. unit rthj-amb (1) 1. when mounted on fr-4 board of 1inch 2 , 2 oz cu and 10sec thermal resistance junction-amb 20 24 c/w rthj-c (2) 2. steady state thermal resistance junction-case (top drain) 1 1.2 c/w rthj-c (3) 3. measured at source pin when the device is mounted on fr-4 board in steady state thermal resistance junction-case (source) 2.8 3.4 c/w
electrical characteristics STK28N3LLH5 4/13 2 electrical characteristics (t case =25c unless otherwise specified) table 4. on/off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 a, v gs = 0 30 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating, v ds = max rating,tc=125c 1 10 a a i gss gate body leakage current (v ds = 0) v gs = 22 v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 12.5v r ds(on) static drain-source on resistance v gs = 10 v, i d = 14 a v gs = 4.5 v, i d = 14 a 0.0035 0.0047 0.0045 0.0055 ? ? table 5. dynamic symbol parameter test conditions min. typ. max. unit c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds =25 v, f=1 mhz, v gs =0 2300 450 61 pf pf pf q g q gs q gd total gate charge gate-source charge gate-drain charge v dd =15 v, i d = 28 a v gs =4.5 v (see figure 3) 19 tbd tbd nc nc nc q gs1 q gs2 pre v th gate-to-source charge post v th gate-to-source charge v dd =15 v, i d = 28 a v gs =4.5 v (see figure 8) tbd tbd nc nc r g gate input resistance f=1 mhz gate dc bias = 0 test signal level = 20 mv open drain tbd ?
STK28N3LLH5 electrical characteristics 5/13 table 6. switching times symbol parameter test conditions min. typ. max. unit t d(on) t r turn-on delay time rise time v dd = 15 v, i d = 14 a, r g =4.7 ?, v gs =4.5 v (see figure 2) tbd tbd ns ns t d(off) t f turn-off delay time fall time v dd =15 v, i d = 14 a, r g =4.7 ?, v gs =4.5 v (see figure 2) tbd tbd ns ns table 7. source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm (1) 1. pulse width limited by package source-drain current source-drain current (pulsed) 28 112 a a v sd (2) 2. pulsed: pulse duration = 300s, duty cycle 1.5% forward on voltage i sd = 25 a, v gs =0 1.1 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 25 a, di/dt = 100 a/s, v dd =20 v, tj=150c (see figure 7) tbd tbd tbd ns nc a
test circuits STK28N3LLH5 6/13 3 test circuits figure 2. switching times test circuit for resistive load figure 3. gate charge test circuit figure 4. test circuit for inductive load switching and diode recovery times figure 5. unclamped inductive load test circuit figure 6. unclamped inductive wavefo rm figure 7. switching time waveform
STK28N3LLH5 test circuits 7/13 figure 8. gate charge waveform vds vgs id vgs(th) qgs1 qgs2 qgd
package mechanical data STK28N3LLH5 8/13 4 package mechanical data in order to meet environmental requirements, st offers these devices in ecopack? packages. these packages have a lead-free second level interconnect. the category of second level interconnect is marked on the package and on the inner box label, in compliance with jedec standard jesd97. the maximum ratings related to soldering conditions are also marked on the inner box label. ecopack is an st trademark. ecopack specifications are available at: www.st.com
STK28N3LLH5 package mechanical data 9/13 table 8. polarpak ? (option ?s?) mechanical data ref. mm inch min. typ. max. min. typ. max. a 0.75 0.80 0.85 0.030 0.031 0.033 a1 0.05 0.002 b1 0.48 0.58 0.68 0.019 0.023 0.027 b2 0.41 0.51 0.61 0.016 0.020 0.024 b3 2.19 2.29 2.39 0.086 0.090 0.094 b4 0.89 1.04 1.19 0.035 0.041 0.047 b5 0.23 0.33 0.43 0.009 0.013 0.017 c 0.20 0.25 0.30 0.008 0.010 0.012 d 6 6.15 6.30 0.236 0.242 0.248 d1 5.74 5.89 6.04 0.226 0.232 0.238 e 5.01 5.16 5.31 0.197 0.203 0.209 e1 4.75 4.90 5.05 0.187 0.193 0.199 h1 0.23 0.009 h2 0.45 0.56 0.018 0.022 h3 0.31 0.41 0.51 0.012 0.016 0.020 h4 0.45 0.56 0.018 0.022 i1 1.92 1.97 2.02 0.075 0.077 0.079 j1 0.38 0.43 0.48 0.014 0.016 0.018 k1 4.22 4.37 4.52 0.166 0.172 0.178 k4 0.24 0.009 m1 4.30 4.50 4.70 0.169 0.177 0.185 m2 3.43 3.58 3.73 0.135 0.141 0.147 m3 0.22 0.009 m4 0.05 0.002 p1 0.15 0.20 0.25 0.006 0.008 0.010 t1 3.48 3.64 4.10 0.137 0.143 0.161 t2 0.56 0.76 0.95 0.022 0.030 0.037 t3 1.20 0.047 t4 3.90 0.154 t5 0.18 0.36 0.007 0.014 < 0 10 12 0 10 12
package mechanical data STK28N3LLH5 10/13 figure 9. polarpak ? (option ?s?) drawings
STK28N3LLH5 package mechanical data 11/13 figure 10. recommended pad layout
revision history STK28N3LLH5 12/13 5 revision history table 9. document revision history date revision changes 07-jul-2008 1 first release 03-sep-2008 2 r ds(on) value updated. v gs value updated in table 2 and table 4
STK28N3LLH5 13/13 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a parti cular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. unless expressly approved in writing by an authorized st representative, st products are not recommended, authorized or warranted for use in milita ry, air craft, space, life saving, or life sustaining applications, nor in products or systems where failure or malfunction may result in personal injury, death, or severe property or environmental damage. st products which are not specified as "automotive grade" may only be used in automotive applications at user?s own risk. resale of st products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or registered trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2008 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com

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